% example Quokka3 settingsfile
% rear passivated skin: Al2O3+SiNx stack on p-type silicon
% Passivation parameters from L. Black et al., "Modeling Recombination at the Si–Al O Interface", 2013, IEEE JPV
%
% (c) 2017 Andreas Fell
%
% uses the simplified 'near-surface skin' syntax
%
% by sweeping the bulk-side fermi-level split (i.e. the voltage) a substantial injection-dependence of the effective recombination can be observed
%
% note that the results differ significantly from the poublished ones;
% this is due to uncertainties / differences in material property models right at the surface where carrier densities become very large
% because of the large surface charge (e.g. BGN model, nieff, ...).

SaveSpatial = 1;

Syntax = 'near-surface skin';

Solver.SolutionType = 'skin single-point';
Solver.Skin.QFPsplit = 0.6;
Solver.Skin.Jterm = 0;

Solver.Illumination.Enable = 0;

Solver.Sweep.Enable = 1;
Sweep.NGroups = 1;
Sweep.GroupA(1).Parameter = 'Solver.Skin.QFPsplit';
Sweep.GroupA(1).Values = [0.3:0.05:0.75];

Mesh.Quality = 'standard';

Thermal.T = 298.15;
Material.Si.BGNModel = 'Si-Schenk1998_LI'; % including / excluding injection-dependent BGN largely changes the resulting J0,skin!

BackgroundDoping.SettingType = 'dopingtype-resistivity';
BackgroundDoping.DopingType = 'p-type';
BackgroundDoping.Resistivity = 200;
Recombination.Type = 'intrinsic plus SRH';
Recombination.SRH(1).Type = 'tau-Et';
Recombination.SRH(1).taun = 371;
Recombination.SRH(1).taup = 3710;
Recombination.SRH(1).Et_Ei = 0;

DopingProfile.Type = 'off';
Surface.RecombinationModel = 'S';
Surface.Sn = 1.08e4;
Surface.Sp = 78;
Surface.Et_Ei = 0;
Surface.Charge = -3e12;

Contact.Enable = 0;